Irlml6401trpbf Datasheet ((hot)) Now

(verify with datasheet):

): -0.45V to -1.0V, making it ideal for low-level logic triggers ~15 nC at VGScap V sub cap G cap S end-sub Power Dissipation ( PDcap P sub cap D ): 1.3W irlml6401trpbf datasheet

The datasheet boldly claims of continuous current. However, this is calculated based on a theoretical ambient temperature of 25°C and perfect thermal properties. (verify with datasheet): ): -0

If you need a , you can download the PDF and print it yourself, or request a sample from Infineon (for engineers). No retailer sells just the datasheet on paper separately. No retailer sells just the datasheet on paper separately

The is a high-performance P-channel HEXFET Power MOSFET designed by Infineon Technologies (formerly International Rectifier) . Known for its compact footprint and high efficiency, this component is a staple in power management and battery-operated devices. Core Technical Specifications

The IRLML6401TRPBF is a high-performance P-channel MOSFET transistor that offers low on-resistance, high current capability, and low gate capacitance. Its compact SOT-23-3 package makes it suitable for surface mount technology (SMT) assembly. The device is suitable for a wide range of applications, including power management, motor control, load switching, and amplifiers. Overall, the IRLML6401TRPBF is a reliable and efficient solution for designers looking for a high-performance P-channel MOSFET transistor.